Power LDMOS transistor

General description 360 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz. Features and benefits  Excellent ruggedness  High efficiency  Low thermal resistance providing excellent thermal stability  Lower output c

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Ampleon

安谱隆

Power LDMOS transistor

360 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz. • Excellent ruggedness\n• High efficiency\n• Low thermal resistance providing excellent thermal stability\n• Lower output capacitance for improved performance in Doherty applications\n• Designed for low memory effects providing excellent digital pre-distortion capability\n• Internally matched for ea;

Ampleon

安谱隆

Package：SOT-1258-7；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：BLC10G18XS-360AV/SOT1258/REELD

Ampleon USA Inc.

Package：SOT-1258-7；包装：管件 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：BLC10G18XS-360AV/SOT1258/TRAYD

Ampleon USA Inc.