BLA9H0912L-1200P数据手册分立半导体产品的晶体管-FETMOSFET-射频规格书PDF

描述 Description

1200 W LDMOS power transistor for avionics applications in the frequency range of 960 MHz to 1215 MHz.

特性 Features

• High efficiency
• Excellent ruggedness
• Designed for avionics band operation
• Excellent thermal stability
• Easy power control
• Integrated dual sided ESD protection enables excellent off-state isolation
• High flexibility with respect to pulse formats
• Internally matched for ease of use
• For RoHS compliance see the product details on the Ampleon website

应用 Application

• Avionics applications in the frequency range of 960 MHz to 1215 MHz

简介

BLA9H0912L-1200P属于分立半导体产品的晶体管-FETMOSFET-射频。由制造生产的BLA9H0912L-1200P晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。