BLA8G1011LS-300数据手册分立半导体产品的晶体管-FETMOSFET-射频规格书PDF

描述 Description

300 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to1090 MHz.

特性 Features

Easy power control
Integrated ESD protection
Enhanced ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (1030 MHz to 1090 MHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances(RoHS)

应用 Application

Avionics transmitter applications in the 1030 MHz to 1090 MHz frequency range

简介

BLA8G1011LS-300属于分立半导体产品的晶体管-FETMOSFET-射频。由制造生产的BLA8G1011LS-300晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。