充电过压保护、充电MOSFET/PNP

BL8593是专为电池充电控制器，它设有P沟道MOSFET特性和0.12V肖特基二极管的反向电流阻挡。这种反向电流阻挡功能切断时源电压被去除或电流，比漏极电压低，无论栅极电压指示打开或关闭的P-MOSFET。\n\n BL8593也适用于在系统中的高侧开关与多电源，隔离不同的电源时变得很重要。\n\n BL8593可以阻止反向电压高达10V。因此，它是一个用于移动电话系统或其它便携式设备供电1节锂离子电池足够安全。\n\n BL8593采用DFN2×2-6L（2型引脚配置），SC70-5

Belling

上海贝岭

P-Channel MOSFET with 0.12V Schottky Diode

文件：495.34 Kbytes 页数：6 Pages

BELLING

上海贝岭

Low power clock/calendar

GENERAL DESCRIPTION The PCF8593 is a CMOS clock/calendar circuit, optimized for low power consumption. Addresses and data are transferred serially via the two-line bidirectional I2C-bus. The built-in word address register is incremented automatically after each written or read data byte. The

文件：139.79 Kbytes 页数：28 Pages

PHI

PHI

Low power clock/calendar

GENERAL DESCRIPTION The PCF8593 is a CMOS clock/calendar circuit, optimized for low power consumption. Addresses and data are transferred serially via the two-line bidirectional I2C-bus. The built-in word address register is incremented automatically after each written or read data byte. The

文件：139.79 Kbytes 页数：28 Pages

PHI

PHI

Real time clock

文件：377.39 Kbytes 页数：2 Pages

EPSONTOYOCOM

爱普生