N-channel Enhanced MOSFETs

BL5N50, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. • Fast switching\n• Improved dv/dt capability\n• RoHS product\n;

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上海贝岭

500V N-Channel MOSFET

500V N-Channel MOSFET

文件：772.02 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

500V N-Channel MOSFET

Features • 4.5A, 500V, RDS(on) = 1.8Ω @VGS = 10 V • Low gate charge ( typical 13 nC) • Low Crss ( typical 8.5 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

文件：772.48 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

PowerMOS transistor Isolated version of PHP8N50E

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Pow

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PHI

PHI