13N50,hv,高压

BL13N50, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications.\n\n • Fast switching\n• 100% avalanche tested\n• RoHS product\n;

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上海贝岭

500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：733.69 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

500V N-Channel MOSFET

500V N-Channel MOSFET

文件：723.9 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

500V N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high a

文件：883.08 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体