BUZ334

SIPMOSPowerTransistor(NchannelEnhancementmodeAvalanche-rated)

SIPMOS®PowerTransistor •Nchannel •Enhancementmode •Avalanche-rated

BUZ334

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,

C334S

ContactForm:C234S:1a/C334S:2aLoadVoltage:200VMaximum

C334S

MAXIMUMRATINGS,ELECTRICALSPECIFICATIONS

CLE334E

VeryHighOutputAluminumGalliumArsenideQuadChipIREDArray

CLE334W

VeryHighOutputAluminumGalliumArsenideQuadchipIREDArray

CM334

T-13/4MidgetGrooveBase

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CM334

MidgetGrooveBase

CR334

GERMANIUMPNPTRANSISTORS

CS334

ContactForm:2aLoadVoltage:200VMaximum

CotoMOS®CT334/CS334 TheCT334andCS334featurecurrentswitchingcapabilityto180mAwithalowonresistanceof8ΩMaximum.DesignedforSecurity,MeasurementandInstrumentationapplicationstheCotoMOS®relayiscapableofhandling200Vloadconditions.Ifyourrequirementsaredifferentple