Heterojunction Bipolar Transistor Technology (InGaP HBT)

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文件：493.8 Kbytes 页数：15 Pages

恩XP

Heterojunction Bipolar Transistor Technology (InGaP HBT)

0--6000 MHz, 15.5 dB 20.5 dBm InGaP HBT GPA The MMG3015NT1 is a general purpose amplifier that is internally input and output matched. It is designed for a broad range of Class A, small-signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 0 t

文件：389.12 Kbytes 页数：14 Pages

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文件：2.36889 Mbytes 页数：47 Pages

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文件：143.17 Kbytes 页数：1 Pages

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多层片状磁珠电感器(BK系列)

内部以银为屏蔽层，发热漏磁现象少。\n\n不必接地，电路设计自由度大。\n\n采用多种材料和方法抑制噪声。;

TaiyoYuden

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Package：0805（2012 公制）；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：滤波器 铁氧体磁珠和芯片 描述：FERRITE BEAD 470 OHM 0805 1LN

TAIYO-YUDEN

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Package：0805（2012 公制）；包装：剪切带（CT）带盒（TB） 类别：滤波器 铁氧体磁珠和芯片 描述：FERRITE BEAD 470 OHM 0805 1LN

TAIYO-YUDEN

太阳诱电