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BR350

WaterproofBorescope/InspectionCameras

EXTECH

Extech Instruments Corporation.

BRUS350

ULTRA-FASTRECOVERY30to35AMPERESSINGLE-PHASE,FULL-WAVEBRIDGESHEATSINKCHASSISPCBOARDMOUNTING

edi

Electronic devices inc.

BSP350

MiniPROFET(High-sideswitchShort-circuitprotectionOvertemperatureprotectionwithhysteresis)

MiniPROFET •High-sideswitch •Short-circuitprotection •Overtemperatureprotectionwithhysteresis •Overloadprotection •Overvoltageprotection •Reversebatteryprotection1) •Switchinginductiveload •Clampofnegativeoutputvoltagewithinductiveloads •Maxi

SIEMENSSiemens Semiconductor Group

西门子德国西门子股份公司

BSP350

MiniPROFET(High-sideswitchShort-circuitprotectionOvertemperatureprotectionwithhysteresis)

MiniPROFET •High-sideswitch •Short-circuitprotection •Overtemperatureprotectionwithhysteresis •Overloadprotection •Overvoltageprotection •Reversebatteryprotection1) •Switchinginductiveload •Clampofnegativeoutputvoltagewithinductiveloads •Maximumcurrentinternal

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

BSWM350DH-PCB

Solidstatepressureswitchwithanalogoutput

SENSORTECHNICS

Sensortechnics GmbH

BSWM350DV-PCB

Solidstatepressureswitchwithanalogoutput

SENSORTECHNICS

Sensortechnics GmbH

BUZ350

SIPMOSPowerTransistor(NchannelEnhancementmodeAvalanche-rated)

SIPMOS®PowerTransistor •Nchannel •Enhancementmode •Avalanche-rated

SIEMENSSiemens Semiconductor Group

西门子德国西门子股份公司

BUZ350

SIPMOSPowerTransistor

SIPMOS®PowerTransistor •Nchannel •Enhancementmode •Avalanche-rated

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

BUZ350

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=22A@TC=25℃ ·DrainSourceVoltage :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.12Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

C350

PhaseControlSCR115AmperesAvg500-1300Volts

Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □

POWEREX

Powerex Power Semiconductors

详细参数

  • 型号:

    BITO350

  • 制造商:

    Burndy

  • 功能描述:

    Tap Terminal F 56mm 76mm

供应商型号品牌批号封装库存备注价格
23+
原厂正规渠道
5000
专注配单,只做原装进口现货
询价
23+
原厂正规渠道
5000
专注配单,只做原装进口现货
询价
进口原装
23+
SC70-5
1213
全新原装现货
询价
MPD
1941+
N/A
14441
加我qq或微信,了解更多详细信息,体验一站式购物
询价
MPD
22+
NA
14441
加我QQ或微信咨询更多详细信息,
询价
TI/TEXAS
23+
SON-10
8931
询价
SMD
23+
DFN
5000
原装正品,假一罚十
询价
ST
24+
BGA
2987
只售原装自家现货!诚信经营!欢迎来电!
询价
SMD
18+
DFN
20081
全新原装现货,可出样品,可开增值税发票
询价
TI
19+
QFN14
16200
原装正品,现货特价
询价
更多BITO350供应商 更新时间2025-7-13 9:31:00