首页 >BIT3252A>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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QuadGatedNon-InvertingPowerDriver Description TheCA3252isusedtointerfacelow-levellogictohighcurrentloads.EachPowerDriverhasfourinvertingswitchesconsistingofaninvertinglogicinputstageandaninvertinglow-sidedriveroutputstage.Allinputsare5VTTL/CMOSlogiccompatibleandhaveacommonEnableinput | Intersil Intersil Corporation | Intersil | ||
QuadGatedNon-InvertingPowerDriver Description TheCA3252isusedtointerfacelow-levellogictohighcurrentloads.EachPowerDriverhasfourinvertingswitchesconsistingofaninvertinglogicinputstageandaninvertinglow-sidedriveroutputstage.Allinputsare5VTTL/CMOSlogiccompatibleandhaveacommonEnableinput | Intersil Intersil Corporation | Intersil | ||
QuadGatedNon-InvertingPowerDriver Description TheCA3252isusedtointerfacelow-levellogictohighcurrentloads.EachPowerDriverhasfourinvertingswitchesconsistingofaninvertinglogicinputstageandaninvertinglow-sidedriveroutputstage.Allinputsare5VTTL/CMOSlogiccompatibleandhaveacommonEnableinput | Intersil Intersil Corporation | Intersil | ||
N-Channel60-V(D-S)MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFETs •175°CMaximumJunctionTemperature •ComplianttoRoHSDirective2002/95/EC | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■30V,5A,RDS(ON)=32mΩ@VGS=10V. RDS(ON)=45mΩ@VGS=4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-89package. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■30V,25A,RDS(ON)=28mΩ@VGS=10V. RDS(ON)=39mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■30V,7.5A,RDS(ON)=28mΩ@VGS=10V. RDS(ON)=40mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | CET | ||
N-Channel20V(D-S)MOSFET FEATURES •Halogen-free •TrenchFET®PowerMOSFET •OptimizedforHigh-SideSynchronousRectifierOperation •100RgTested •100UISTested APPLICATIONS •NotebookCPUCore -High-SideSwitch | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 30V,7.5A,RDS(ON)=28mW@VGS=10V. RDS(ON)=40mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 30V,8A,RDS(ON)=29mW@VGS=10V. RDS(ON)=36mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired. RDS(ON)=55mW@VGS=2.5V. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS |
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