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型号：ACDBUC0320-HF；Package：SOD-523F；SMD Schottky Barrier Diode

Features -Lowforwardvoltage. -Designedformountingonsmallsurface. -Extremelythinpackage. -Majoritycarrierconduction. -AEC-Q101Qualified&PPAP.

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型号：AP2121AJ4-3.2TRG1；Package：CSP-4；HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR

Features ·LowDropoutVoltageatIOUT=100mA:150mV Typical(Except1.2V,1.3Vand1.5VVersions) ·LowStandbyCurrent:0.1μATypical ·LowQuiescentCurrent:25μATypical ·HighRippleRejection:70dBTypical（f=1kHz） ·OutputCurrent:MoreThan200mA(300mA Limit) ·ExtremelyLowNoise:

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型号：BC55-10PA；Package：SOT1061；60 V, 1 A NPN medium power transistors

Featuresandbenefits •Highcurrent •Threecurrentgainselections •Highpowerdissipationcapability •Exposedheatsinkforexcellentthermalandelectricalconductivity •LeadlessverysmallSMDplasticpackagewithmediumpowercapability •AEC-Q101qualified

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型号：BC55-10PA；Package：HUSON3；60 V, 1 A NPN medium power transistors

Featuresandbenefits Highcurrent Threecurrentgainselections Highpowerdissipationcapability Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) AEC-Q101qualified

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型号：BCX56；Package：SC-62；80 V, 1 A NPN medium power transistors

Featuresandbenefits Highcurrent Threecurrentgainselections Highpowerdissipationcapability Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) AEC-Q101qualified

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型号：BCX56；Package：SC-62；80 V, 1 A NPN medium power transistors

1.Generaldescription NPNmediumpowertransistorsinaSOT89(SC-62)flatleadSurface-MountedDevice(SMD) plasticpackage 2.Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability 3.Applications •Li

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型号：BCX56；NPN TRANSISTOR

VOLTAGE45~80.0VoltsCURRENT1.0Ampers FEATURES ●Highcurrent(max.1A). ●Lowvoltage(max.80V).

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型号：BCX56；Package：SOT-89-3L；SOT-89-3L Plastic-Encapsulate Transistors

FEATURES ®PNPComplementstoBCX51,BCX52,BCX53 ®LowVoltage ®HighCurrent APPLICATIONS ®DriverStagesofAudioAmplifiers

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型号：BCX56；Package：SOT-89；Plastic-Encapsulate Transistors

FEATURES PNPComplementstoBCX51,BCX52,BCX53 LowVoltage HighCurrent APPLICATIONS DriverStagesofAudioAmplifiers

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型号：BCX56；Package：SOT-89；NPN Silicon AF Transistors

FEATURES ●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BCX51…BCX53(PNP)