VHF power amplifier modules

DESCRIPTION The BGY135 and BGY136 are two-stage broadband RF amplifier modules in a SOT132B package. Each module consists of two NPN transistor dies together with lumped-element matching components. FEATURES • 12.5 V nominal supply voltage • 18 W output power. APPLICATIONS • Mobile communica

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PHI

PHI

2.5V REFERENCE DIODE, GUARANTEED TO 100K RADSi TESTED TO MIL-STD-883, METHOD 1019.5

文件：110.36 Kbytes 页数：8 Pages

NSC

国半

N-CHANNEL MOS BROADBAND RF POWER FETs

The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode MOSFETs . . . designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push–pull configuration. • Guaranteed 28 Volt, 150 MHz Performance MRF136

文件：284.67 Kbytes 页数：12 Pages

MOTOROLA

摩托罗拉

POWER TRANSISTORS(8.0A,60-100V,70W)

PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS 8.0 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 70 WATTS

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MOSPEC

统懋