RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

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恩XP

Analog high linearity low noise variable gain amplifier

The BGU7060 is a fully integrated analog-controlled variable gain amplifier module. Itslow noise and high linearity performance makes it ideal for sensitive receivers in cellularbase station applications. The BGU7060 is operating in the 699 MHz to 748 MHzfrequency range and has a gain control range Input and output internally matched to 50 Ω\nLow noise figure of 0.71 dB\nHigh input IP3 of 1 dBm\nHigh Pi(1dB) of -12.6 dBm\nBypass mode of LNA giving high dynamic gain range\nGain control range of 0 dB to 35 dB\nSingle 5 V supply\nSingle analog gain control of 0 V to 3.3 V\nUnconditionally stable ;

恩XP

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 75A, RDS(ON) = 14mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 package.

文件：507.32 Kbytes 页数：5 Pages

CET

华瑞

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 75A, RDS(ON) = 14mΩ @VGS = 5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 package.

文件：511.7 Kbytes 页数：5 Pages

CET

华瑞

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 75A, RDS(ON) = 13mΩ @VGS = 5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 package.

文件：530.48 Kbytes 页数：5 Pages

CET

华瑞