RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

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恩XP

宽带硅锗低噪声放大器MMIC

The BGU7003W MMIC is a wideband amplifier in SiGe:C technology for high speed, low-noise applications in a plastic, leadless 6 pin, extremely thin small outline SOT886 package. Low noise high gain microwave MMIC\nApplicable between 40 MHz and 6 GHz\nIntegrated temperature stabilized bias for easy design\nBias current configurable with external resistor\n110 GHz transit frequency - SiGe:C technology\nPower-down mode current consumption < 1 μA\nESD protection > 1 kV Human Bo;

恩XP

MicroPower, Ultra-sensitive Hall Effect Switch

GENERAL DESCRIPTION MA7003 is a three-terminal Hall Effect sensor device with an output driver. The device is using CMOS process includes an on-chip Hall voltage generator for magnetic sensing, a comparator that amplifies the Hall voltage, and a Schmitt trigger to provide switching hysteresis

文件：119.32 Kbytes 页数：2 Pages

MPOWERMajor-Power Technology Co., LTD.

久昌科技久昌科技股份有限公司

TRI-BAND GSM/DCS/PCS LNA

DESCRIPTION The STB7003 is a tri-band LNA designed for GSM/DCS/ PCS applications. The GC pin sets the LNA gain levels. The innovative architecture implemented allows to reach very low current consumption. LNA1 works at 0.9-1.0 GHz and LNA2 over the 1.8-2GHz frequency range. • SUPPLY VOLTAGE 2.8V

文件：221.44 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

MOSFET POWER AMPLIFIER

文件：134.44 Kbytes 页数：8 Pages

TI

德州仪器