BGS13PN10数据手册RF/IF射频/中频RFID的射频开关规格书PDF

描述 Description

The BGS13PN10 is a single pole triple throw (SP3T) high linearity, high power RF switch optimized for mobile phone applications up to 6.0 GHz. This single supply chip integrates on-chip CMOS logic driven by a two simple, CMOS or TTL compatible control input signals. Unlike GaAs technology, the 0.1 dB compression point exceeds the switch maximum input power level, resulting in linear performance at all signal levels and external DC blocking capacitors at the RF ports are only required if DC voltage is applied externally.
The BGS13PN10 enables critical band combinations for UL (B1 + B3), (B2+B4), DL-CA (B4 + B12) and SV-LTE (B5 + B13). This device handles very high transmitting signal levels of up to 38 dBm, while at the same time exhibiting low losses to conserve battery power. Ultra high linearity devices have a significant impact on system sensitivity. For instance, 3 dBm more linearity in whole RF-front-end leads to 6 dB better signal-to-noise ratio. Hence, data rate speed is improved by up to 40% allowing a step e.g. from 20 Mbps (QAM16 4/5) to 33 Mbps (QAM64 4/5). The BGS13PN10 stands for best-in-class ISO and IL performance across all frequencies.

特性 Features

·High max RF power: 38 dBm
·Three ultra-low loss ports: ·0.19 dB @ f=0.9 GHz, PIN=38dBm
·0.24 dB @ f=1.9 GHz, PIN=38dBm
·0.26 dB @ f=2.7 GHz, PIN=33dBm
·1.06 dB @ f=3.6 GHz, PIN=33dBm
·1.62 dB @ f=5.5 GHz, PIN=33dBm

·No DC decoupling components required, if no external DC is applied on RF ports
·High ESD robustness
·Low harmonic generation
·No power supply blocking required
·Supply voltage range: 1.8 to 3.6V
·No insertion loss change within supply voltage range
·No linearity change within supply voltage range
·Suitable for EDGE / C2K / LTE / WCDMA / SV-LTE applications
·0.5 to 6.0 GHz coverage
·Small form factor 1.1 mm x 1.5 mm
·400 µm pad pitch
·RoHS and WEEE compliant package

应用 Application

·Suitable for EDGE / C2K / LTE / WCDMA / SV-LTE
·Mobile cellular Rx/Tx applications Optimized for main path and entire RF Front-end without any power restrictions in mobile communication: ·DL/UL CA and MIMO
·HPUE 26dBm devices (high power Tx)
·Micro/Pico cells/Cellular base stations
·Test equipment

简介

BGS13PN10属于RF/IF射频/中频RFID的射频开关。由制造生产的BGS13PN10射频开关射频开关产品是用于在多个可用信号路径之间路由 RF、IF 或微波信号的器件。示例应用包括多天线（分集）接收器中的天线选择、多模式系统中发射-接收路径的选择，或在发射和接收信号链之间切换天线。