丝印：4T；Package：TSLP-10-3；Ultra high RF voltage antenna tuning switch

Description The BGSA400ML10 is a versatile shunt to ground 4 x single-pole single-throw (4xSPST) RF antenna tuning switch. It is optimized for low COFF as well as low RON enabling applications up to 7.125GHz. The BGSA400ML10 is ideal for antenna tuning application. This chip integrates on-chip

文件：120.92 Kbytes 页数：2 Pages

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Ultra high RF voltage antenna tuning switch

Features  Low RON resistance of 2.0 Ω at each port in ON state  Low COFF capacitance of 165 fF at each port in OFF state  High RF operating peak voltage handling of typical 90 V in OFF state  Low harmonic generation  MIPI RFFE 2.1 control interface  Extremely low current consumption of

文件：120.92 Kbytes 页数：2 Pages

INFINEON

英飞凌

Ultra high RF voltage antenna tuning switch

Description The BGSA400ML10 is a versatile shunt to ground 4 x single-pole single-throw (4xSPST) RF antenna tuning switch. It is optimized for low COFF as well as low RON enabling applications up to 7.125GHz. The BGSA400ML10 is ideal for antenna tuning application. This chip integrates on-chip

文件：120.92 Kbytes 页数：2 Pages

INFINEON

英飞凌

Ultra high RF voltage antenna tuning switch

Description The BGSA400ML10 is a versatile shunt to ground 4 x single-pole single-throw (4xSPST) RF antenna tuning switch. It is optimized for low COFF as well as low RON enabling applications up to 7.125GHz. The BGSA400ML10 is ideal for antenna tuning application. This chip integrates on-chip

文件：120.92 Kbytes 页数：2 Pages

INFINEON

英飞凌

丝印：3T；Package：TSLP-10-3；Four throws low resistance antenna tuning switch

Features  Low RON resistance of 0.98 Ω at each port in ON state  Low COFF capacitance of 205 fF at each port in OFF state  High RF operating peak voltage handling of typical 50 V in OFF state  MIPI RFFE 2.1 control interface  Extremely low current consumption of 22 μA  4 USID addresses

文件：121.11 Kbytes 页数：2 Pages

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丝印：3T；Package：TSLP-10-3；Four throws low resistance antenna tuning switch

Features  Low RON resistance of 0.98 Ω at each port in ON state  Low COFF capacitance of 205 fF at each port in OFF state  High RF operating peak voltage handling of typical 50 V in OFF state  MIPI RFFE 2.1 control interface  Extremely low current consumption of 22 μA  4 USID addresses

文件：121.11 Kbytes 页数：2 Pages

INFINEON

英飞凌

Four throws low resistance antenna tuning switch

Features  Low RON resistance of 0.98 Ω at each port in ON state  Low COFF capacitance of 205 fF at each port in OFF state  High RF operating peak voltage handling of typical 50 V in OFF state  MIPI RFFE 2.1 control interface  Extremely low current consumption of 22 μA  4 USID addresses

文件：121.11 Kbytes 页数：2 Pages

INFINEON

英飞凌

Four throws low resistance antenna tuning switch

Features  Low RON resistance of 0.98 Ω at each port in ON state  Low COFF capacitance of 205 fF at each port in OFF state  High RF operating peak voltage handling of typical 50 V in OFF state  MIPI RFFE 2.1 control interface  Extremely low current consumption of 22 μA  4 USID addresses

文件：121.11 Kbytes 页数：2 Pages

INFINEON

英飞凌

Four throws low resistance antenna tuning switch

Features  Low RON resistance of 0.98 Ω at each port in ON state  Low COFF capacitance of 205 fF at each port in OFF state  High RF operating peak voltage handling of typical 50 V in OFF state  MIPI RFFE 2.1 control interface  Extremely low current consumption of 22 μA  4 USID addresses

文件：121.11 Kbytes 页数：2 Pages

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丝印：X6；Package：PG-ULGA-10-1；DPDT cross switch with GPIO control interface

Description The BGSX22G6U10 RF CMOS switch is specifically designed for GSM, WCDMA, LTE and 5G applications. This DPDT oers low insertion loss even at high frequencies of up to 7.125 GHz, low harmonic generation along with high isolation between RF ports. In addition, the fast switching speed

文件：632.64 Kbytes 页数：14 Pages

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