BGD712C

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

ETC

BGD712C

750 MHz, 18 dB gain push-pull amplifier

Generaldescription HybridhighdynamicrangeamplifiermoduleinSOT115Jpackageoperatingatasupplyvoltageof24V(DC). Features ■Excellentlinearity ■Extremelylownoise ■Excellentreturnlossproperties ■Siliconnitridepassivation ■Ruggedconstruction ■Goldmetallizationens

PHI

BGD712C

750 MHz, 18.5 dB gain power doubler amplifier

Generaldescription HybridhighdynamicrangeamplifiermoduleinSOT115Jpackageoperatingatasupplyvoltageof24V(DC). Featuresandbenefits ■Excellentlinearity ■Extremelylownoise ■Excellentreturnlossproperties ■Siliconnitridepassivation ■Ruggedconstruction ■Goldmeta

ETC

BGD712C

750 MHz, 18.5 dB gain power doubler amplifier; Excellent linearity\nExcellent return loss properties\nExtremely low noise\nGold metallization ensures excellent reliability\nRugged construction\n;

Overview Hybrid high dynamic range amplifier module operating at a supply voltage of 24 V (DC).\n

恩XP

BGD712C

750 MHz, 18.5 dB gain power doubler amplifier

ETC

BGD712C_10

750 MHz, 18.5 dB gain power doubler amplifier

ETC

BGD712C_15

750 MHz, 18.5 dB gain power doubler amplifier

BGD712C_2015

750 MHz, 18.5 dB gain power doubler amplifier