BGB741L7ESD中文资料多功能 LNA数据手册Infineon规格书

描述 Description

The BGB741L7ESD is a high performance low noise amplifier (LNA) MMIC based on Infineon’s reliable high volume silicon germanium carbon (SiGe:C) bipolar technology. Its integrated feedback provides a broadband pre-match to 50 Ω at input and output up to 3.5 GHz and improves the stability against parasitic oscillations. These measures simplify the design of arbitrary LNA application circuits. The integrated active biasing reduces the external parts count and stabilizes the bias current against temperature- and process-variations. The integrated protection elements make the device robust against electrostatic discharge (ESD) and high RF input power levels. The device is highly flexible because the bias current is adjustable and the device works with a broad supply voltage range. The BGB741L7ESD comes in a Pb-free and halogen-free low profile TSLP-7-1 package.

应用 Application

·Mobile TV, DAB, RKE, AMR, Cellular, ZigBee, WiMAX, SDARs, WiFi, Cordless phone, UMTS, WLAN

简介

BGB741L7ESD属于RF/IF射频/中频RFID的射频放大器。由制造生产的BGB741L7ESD射频放大器在射频应用中，射频放大器产品可用于信号增益和缓冲。这些产品与通用运算放大器的不同之处在于，它们通常适用于更高的频率，更倾向于提供不可调节的固定增益，并且输入或输出阻抗值符合常用传输线特性阻抗。