首页 >BGB112>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
AVI/FDevicewithESDProtection | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
BATTERYHOLDERS&SNAPSAA,AAA,C,D&COINCELL | ADAM-TECHAdam Technologies, Inc. 亚当科技亚当科技股份有限公司 | ADAM-TECH | ||
NPNDSERIESTRANSISTORS | SISEMICShenzhen SI Semiconductors Co.,LTD. 深爱半导体深圳深爱半导体股份有限公司 | SISEMIC | ||
Heartratesensors | SILABS Silicon Laboratories | SILABS | ||
Bluetoothv.4.0,singlemodecompliant | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | etc2 | ||
Bluetoothspecification | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | etc2 | ||
BLED112USBdongle | SILABS Silicon Laboratories | SILABS | ||
WIDEWAVELENGTHBANDTYPEPHOTODIODE BlueSensitivePhotodiodes | SHARPSharp Microelectronics of the Americas (SMA) 夏普微美国夏普微电子公司（SMA） | SHARP | ||
N-channelenhancementmodefield-effecttransistor Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusingTrenchMOS™1technology. Features ■TrenchMOS™technology ■Veryfastswitching ■Logiclevelcompatible ■Subminiaturesurfacemountpackage ■Gate-sourceESDprotectiondiodes. c c Applications ■ | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
N-channelenhancementmodefield-effecttransistor 1.Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusing TrenchMOS™1technology. Productavailability: BSH112inSOT23. 2.Features nTrenchMOS™technology nVeryfastswitching nLogiclevelcompatible nSubminiaturesurfacemountpackage nGate-sourc | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA |
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