RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

50 MHz至250 MHz高线性度硅可变增益放大器；24 dB增益范围

BGA7350 MMIC是两个可独立数字控制的IF可变增益放大器(VGA)，工作频率范围为50 MHz至250 MHz。每个IF VGA放大器都具有24 dB的增益范围，采用其最大增益设置时在1 dB增益压缩点处提供17 dBm的输出功率以及卓越的线性性能。BGA7350双IF VGA针对小于±0.1 dB的差分增益误差进行优化，实现精确的增益控制，且具有小于±0.4 dB的总集成增益误差。每个放大器的增益控制都为独立的数字增益控制字，从外部通过两组5位信号提供。BGA7350采用32针5 mm x 5 mm无引脚HVQFN32封装。 双独立数字控制24 dB增益范围VGA（5位控制）\n50 MHz至250 MHz的工作频率范围\n增益步长：1 dB ± 0.1 dB\n18.5 dB功率增益\n快速增益级切换能力\n1 dB增益压缩点处的17 dBm输出功率\n5 V单电源工作，采用掉电控制\n逻辑电平关断控制针脚可降低电源电流\n所有针脚均提供出色的ESD保护\n潮湿敏感度等级2\n无条件稳定\n符合欧盟2002/95/EC危害性物质限制(RoHS)指令 ;

恩XP

?곭탡?덃끝雍멨눣?㎩댍IC

文件：197.41 Kbytes 页数：9 Pages

BOWIN

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES ■ 100V, 2.6A, RDS(ON) = 190mΩ @VGS = 10V. ■ -100V, -2.0A, RDS(ON) = 320mΩ @VGS = -10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

文件：183.32 Kbytes 页数：7 Pages

CET

华瑞

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. 100V, 2.6A, RDS(ON) = 190mW @VGS = 10V. -100V, -2.0A, RDS(ON) = 320mW @VGS = -10V. Lead free product is acquired.

文件：807.98 Kbytes 页数：7 Pages

CET-MOS

华瑞