RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

MMIC宽带放大器

Silicon Monolitic Microwave Integrated Circuit (MMIC) wideband amplifier with internalmatching circuit in a 6-pin SOT363 plastic SMD package. Input internally matched to 50 Ω\nA gain of 23.2 dB at 250 MHz increasing to 24.3 dB at 2150 MHz\nOutput power at 1 dB gain compression = 4 dBm\nSupply current = 17.4 mA at a supply voltage of 5 V\nReverse isolation > 32 dB up to 2150 MHz\nGood linearity with low second order and third order product;

恩XP

LOW DROPOUT VOLTAGE REGULATOR

文件：175.32 Kbytes 页数：10 Pages

NJRC

日本无线

LOW DROPOUT VOLTAGE REGULATOR

文件：175.32 Kbytes 页数：10 Pages

NJRC

日本无线

Resonant-Mode Power Supply Controllers

文件：438.91 Kbytes 页数：9 Pages

TI

德州仪器