RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

MMIC宽带放大器

Silicon Monolitic Microwave Integrated Circuit (MMIC) wideband amplifier with internalmatching circuit in a 6-pin SOT363 plastic SMD package. Internally matched to 50 Ω\nA gain of 30.0 dB at 2150 MHz\nOutput power at 1 dB gain compression = 4 dBm at 2150 MHz\nSupply current = 19.9 mA at a supply voltage of 3.3 V\nReverse isolation > 36 dB up to 2150 MHz\nGood linearity with low second order and third order products\nNoise figure = 3.3 dB ;

恩XP

18.5 dB 0.35-400 MHz 1000 mWATT WIDEBAND LINEAR AMPLIFIER

The RF Line Wideband Linear Amplifier Designed for amplifier applications in 50 to 100 ohm systems requiring wide bandwidth, low noise and low distortion. This hybrid provides excellent gain stability with temperature and linear amplification as a result of the push–pull circuit design. • Speci

文件：121.76 Kbytes 页数：4 Pages

Motorola

摩托罗拉

Power Inductors - Shielded

文件：451.88 Kbytes 页数：1 Pages

CT

Central Technologies

Low profile (2.8 x 3.0mm square, 1.0/1.2/1.5/1.8mm

文件：121.3 Kbytes 页数：2 Pages

Toko