CATV-MATV AMPLIFIERS

DESCRIPTION The BFW 16A and BFW 17A are multi-emitter silicon planar epitaxial NPN transistors in Jedec TO-39 metal case, with extremely good intermodulation properties and high power gain. They ae primarily intended for final and driver stages in channel-and band-serial amplifiers with high outp

文件：88.49 Kbytes 页数：4 Pages

STMICROELECTRONICS

意法半导体

Small Signal Transistors

文件：56.45 Kbytes 页数：1 Pages

Central

HF WIDEBAND TRANSISTORS

HF WIDEBAND TRANSISTORS The BFW16A is NPN multi-emitter transistor in a TO-39 metal envolope, with the collector connected to the case. The transistor has extremely good intermodulation properties and a high power gain.It is a ruggedized version of the BFW16, which it succeds. It is primarily int

文件：120.27 Kbytes 页数：3 Pages

COMSET

CATV-MATV AMPLIFIERS

DESCRIPTION The BFW 16A and BFW 17A are multi-emitter silicon planar epitaxial NPN transistors in Jedec TO-39 metal case, with extremely good intermodulation properties and high power gain. They ae primarily intended for final and driver stages in channel-and band-serial amplifiers with high outp

文件：73.96 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN SILICON RF BROADBAND TRANSISTOR

NPN Silicon RF Broadband Transistor

文件：58.13 Kbytes 页数：3 Pages

SIEMENS

西门子

CATV-MATV AMPLIFIERS

DESCRIPTION The BFW 16A and BFW 17A are multi-emitter silicon planar epitaxial NPN transistors in Jedec TO-39 metal case, with extremely good intermodulation properties and high power gain. They ae primarily intended for final and driver stages in channel-and band-serial amplifiers with high outp

文件：88.49 Kbytes 页数：4 Pages

STMICROELECTRONICS

意法半导体

NPN - RF Transistor Die 0.4 Amp, 30 Volt

文件：631.67 Kbytes 页数：9 Pages

Central

NPN - RF Transistor Die 0.4 Amp, 20 Volt

文件：585.47 Kbytes 页数：8 Pages

Central

NPN - RF Transistor Die 0.4 Amp, 30 Volt

文件：665.86 Kbytes 页数：9 Pages

Central

PNP - RF Transistor Die 0.4 Amp, 40 Volt

文件：624.25 Kbytes 页数：8 Pages

Central