NPN wideband silicon RF transistor

NPN silicon microwave transistor in a plastic, 4-pin dual-emitter SOT343F package offering an innovative Ku-band DRO solution. DROs with good output power and low phase noise at very low current consumption: 5 dBm and −55 dBc/Hz/1 kHz at 12 mA\nLow-noise, high gain for low cost LNA solutions\n40 GHz fT silicon technology;

恩XP

NPN wideband silicon RF transistor

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恩XP

Aluminum Electrolytic Capacitors

文件：5.29445 Mbytes 页数：66 Pages

KEMETKEMET Corporation

基美

FRJAE ASSEMBLY, 6 POSITION AND 8 POSITION

文件：117.17 Kbytes 页数：1 Pages

AMPHENOL

安费诺

P-Channel 1.8V Logic Level PowerTrench MOSFET -20V, -6.1A, 35mohm

General Description FDMB668P is excellent for load switch and DC-DC conversion among portable electronics. It achieves an optimal balance among efficiency, thermal transfer and small form by integrating a P-channel MOSFET with minimized on-state resistance into a MicroFET 3x1.9 package. When opti

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Fairchild

仙童半导体