Silicon NPN Planar RF Transistor

Features • High power gain • Low noise figure • High transition frequency • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications    Wide band amplifier up to GHz range.

文件：218.49 Kbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

RF & MICROWAVE TRANSISTORS

DESCRIPTION The BFR92ALT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. KEY FEATURES ■ High FTau-4.5GHz ■ Low noise-3.0dB@500MHz ■ Low cost SOT23 package AP PLICATIONS/BENEFITS ■ LNA, Oscillator, Pre-Driver

文件：325.01 Kbytes 页数：1 Pages

MICROSEMI

美高森美

RF TRANSISTORS NPN SILICON

Designed primarily for use in high–gain, low–noise, small–signal UHF and microwave amplifiers constructed with thick and thin–film circuits using surface mount components. • T1 suffix indicates tape and reel packaging of 3,000 units per reel.

文件：54.6 Kbytes 页数：2 Pages

MOTOROLA

摩托罗拉

Silicon NPN Planar RF Transistor

Features • High power gain • Low noise figure • High transition frequency • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications    Wide band amplifier up to GHz range.

文件：218.49 Kbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

Silicon NPN Planar RF Transistor

Features • High power gain • Low noise figure • High transition frequency • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications    Wide band amplifier up to GHz range.

文件：218.49 Kbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

NPN 5 GHz wideband transistor

DESCRIPTION Silicon NPN transistor encapsulated in a plastic SOT416 (SC-75) package. The BFR92AT uses the same crystal as the SOT23 version: BFR92A. FEATURES • High power gain • Gold metallization ensures excellent reliability • SOT416 (SC-75) package. APPLICATIONS RF amplifiers, mixer

文件：90.08 Kbytes 页数：16 Pages

PHI

PHI

NPN 5 GHz wideband transistor

DESCRIPTION Silicon NPN transistor encapsulated in a plastic SOT323 (S-mini) package. The BFR92AW uses the same crystal as the SOT23 version, BFR92A. FEATURES • High power gain • Gold metallization ensures excellent reliability • SOT323 (S-mini) package. APPLICATIONS It is designed for

文件：91 Kbytes 页数：12 Pages

PHI

PHI

Silicon NPN Planar RF Transistor

Features • High power gain • Low noise figure • High transition frequency • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications    Wide band amplifier up to GHz range.

文件：218.49 Kbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

NPN 5 GHz wideband transistor

DESCRIPTION Silicon NPN transistor encapsulated in a plastic SOT323 (S-mini) package. The BFR92AW uses the same crystal as the SOT23 version, BFR92A. FEATURES • High power gain • Gold metallization ensures excellent reliability • SOT323 (S-mini) package. APPLICATIONS It is designed for u

文件：277.1 Kbytes 页数：13 Pages

恩XP