BFR193F数据手册分立半导体产品的晶体管-双极（BJT）-射频规格书PDF

描述 Description

NPN Silicon RF Transistor

特性 Features

·For low noise, high-gain amplifiers up to 2 GHz
·For linear broadband amplifiers
·fT = 8 GHz, NFmin = 1 dB at 900 MHz
·Pb-free (RoHS compliant) and halogen-free (WEEE compliant) product

应用 Application

·Wireless Communications
·LNA in RF Front-end
·For various applications like cellular and cordless phones, DECT, Tuners, FM, and RF modems.

简介

BFR193F属于分立半导体产品的晶体管-双极（BJT）-射频。由制造生产的BFR193F晶体管 - 双极（BJT）- 射频双极型射频晶体管是一种具有三个端子的半导体器件，用于在涉及射频的设备中开关或放大信号。双极结型晶体管设计为 NPN 或 PNP，特征参数包括晶体管类型、集射极击穿电压、跃迁频率、噪声系数、增益、功率、DC 电流增益和集电极电流。