BFR181W数据手册分立半导体产品的晶体管-双极（BJT）-射频规格书PDF

描述 Description

NPN Silicon RF Transistor for low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA

特性 Features

·For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA
·fT = 8 GHz, F = 0.9 dB at 900 MHz
·Pb-free (RoHS compliant) package1)
·Qualification report according to AEC-Q101 available

应用 Application

·Wireless Communications
·For amplifier and oscillator applications in RF Front-end

简介

BFR181W属于分立半导体产品的晶体管-双极（BJT）-射频。由制造生产的BFR181W晶体管 - 双极（BJT）- 射频双极型射频晶体管是一种具有三个端子的半导体器件，用于在涉及射频的设备中开关或放大信号。双极结型晶体管设计为 NPN 或 PNP，特征参数包括晶体管类型、集射极击穿电压、跃迁频率、噪声系数、增益、功率、DC 电流增益和集电极电流。