零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
BFR106 | Silicon NPN RF Transistor DESCRIPTION •LowNoiseFigure NF=2.5dBTYP.@VCE=8V,IC=20mA,f=900MHz •HighGain ︱S21e︱2=10.5dBTYP.@VCE=8V,IC=70mA,f=900MHz APPLICATIONS •Designedforuseinlownoise,high-gainamplifiersandlinearbroadbandamplifiers. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | ||
BFR106 | RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | ||
BFR106 | Low Noise Figure DESCRIPTION •LowNoiseFigure NF=2.5dBTYP.@VCE=8V,IC=20mA,f=900MHz •HighGain ︱S21e︱2=10.5dBTYP.@VCE=8V,IC=70mA,f=900MHz APPLICATIONS •Designedforuseinlownoise,high-gainamplifiersandlinearbroadbandamplifiers. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ||
BFR106 | NPN 5 GHz wideband transistor DESCRIPTION NPNsiliconplanarepitaxialtransistorinaplasticSOT23envelope.Itisprimarilyintendedforlownoise,generalRFapplications. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | ||
BFR106 | NPN Silicon RF Transistor (For low noise, high-gain amplifiers For linear broadband amplifiers) NPNSiliconRFTransistor •Forlownoise,high-gainamplifiers •Forlinearbroadbandamplifiers •Specialapplication:antennaamplifiers •Complementarytype:BFR194(PNP) | SIEMENS Siemens Ltd | ||
BFR106 | NPN Silicon RF Transistor LowNoiseSiliconBipolarRFTransistor •HighlinearitylownoiseRFtransistor •22dBmOP1dBand31dBmOIP3@900MHz,8V,70mA •ForUHF/VHFapplications •Driverformultistageamplifiers •Forlinearbroadbandandantennaamplifiers •Collectordesignsupports5Vsupplyvoltage | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | ||
BFR106 | NPN Silicon RF Transistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | ||
BFR106 | Low Noise Silicon Bipolar RF Transistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | ||
BFR106 | NPN 5 GHz wideband transistor | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | ||
NPN Silicon RF Transistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
Low Noise Silicon Bipolar RF Transistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
NPN 5 GHz wideband transistor | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | |||
NPN 5 GHz wideband transistor | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | |||
包装:卷带(TR) 封装/外壳:TO-236-3,SC-59,SOT-23-3 类别:分立半导体产品 晶体管 - 双极(BJT)- 射频 描述:RF TRANS NPN 15V 5GHZ TO236AB | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
PrecisionWirewoundResistors 100Series/SMSeries/PCSeries •Resistancesto6Megohms •ResistanceTolerancesto±0.005 •TemperatureCoeffcientsof±2ppm/°C •HighTCRAvailable(Balco&PlatinumWire) •100AcceptanceTested/TraceabletoNIST •LongTermStability/100ppm/year •MatchedResistanceSetst | Riedon Riedon Inc. | |||
PrecisionWirewoundResistors | Riedon Riedon Inc. | |||
CustomerSpecification Construction Diameters(In) 1)Component15X1COND a)Conductor22(26/36)AWGBareCopper0.027 b)Insulation0.011Wall,Nom.PVC,SemiRigid0.049 (1)Color(s) CondColorCondColorCondColor 1BLACK3 GREEN/YELLOW 5WHITE 2BLUE4BROWN 2)CableAssembly5ComponentsCabled a) | ALPHAWIREAlpha Wire 阿尔法电线 | |||
CustomerSpecification Construction Diameters(In) 1)Component15X1COND a)Conductor22(26/36)AWGBareCopper0.027 b)Insulation0.011Wall,Nom.PVC,SemiRigid0.049 (1)Color(s) CondColorCondColorCondColor 1BLACK3 GREEN/YELLOW 5WHITE 2BLUE4BROWN 2)CableAssembly5ComponentsCabled a) | ALPHAWIREAlpha Wire 阿尔法电线 | |||
ElectricalIndustryLamps | VCC Visual Communications Company | |||
SURFACEMOUNTHIGHEFFICIENCYRECTIFIERDIODES Features ●GlassPassivatedDieConstruction ●IdeallySuitedforAutomaticAssembly ●LowForwardVoltageDrop,HighEfficiency ●LowPowerLoss ●Ultra-FastRecoveryTime ●PlasticCaseMaterialhasULFlammabilityClassificationRating94V-O | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 |
晶体管资料
- 型号:
- 别名:
三极管、晶体管、晶体三极管
- 生产厂家:
- 制作材料:
Si-NPN
- 性质:
表面帖装型 (SMD)_甚高频 (VHF)_超高频/特高频
- 封装形式:
贴片封装
- 极限工作电压:
20V
- 最大电流允许值:
0.1A
- 最大工作频率:
5GHZ
- 引脚数:
3
- 可代换的型号:
2SC3356,2SC3775,
- 最大耗散功率:
- 放大倍数:
- 图片代号:
H-15
- vtest:
20
- htest:
5000000000
- atest:
.1
- wtest:
0
详细参数
- 型号:
BFR106
- 制造商:
NXP Semiconductors
- 功能描述:
RF TRANSISTOR NPN SOT-23
- 功能描述:
RF TRANSISTOR, NPN, SOT-23
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
NXP(恩智浦) |
23+ |
标准封装 |
9443 |
全新原装正品/价格优惠/质量保障 |
询价 | ||
NXP |
16+ |
SOT-23 |
8900 |
全新原装现货,假一罚十 |
询价 | ||
INFINEON/英飞凌 |
2019+ |
SOT23 |
78550 |
原厂渠道 可含税出货 |
询价 | ||
Infineon/英飞凌 |
22+ |
SOT-23 |
163000 |
一级代理商现货保证进口原装正品假一罚十价格合理 |
询价 | ||
INFINEON/英飞凌 |
20+ |
SOT-23 |
120000 |
原装正品 可含税交易 |
询价 | ||
NXP/恩智浦 |
SOT23 |
7906200 |
询价 | ||||
PHI |
05+ |
原厂原装 |
464 |
只做全新原装真实现货供应 |
询价 | ||
PHILIPS |
2000+ |
6000 |
原装正品现货供应 |
询价 | |||
NXP |
13+ |
SOT23 |
9600 |
特价热销现货库存 |
询价 | ||
NXP恩智浦/PHILIPS飞利浦 |
2008++ |
SOT-23 |
6200 |
新进库存/原装 |
询价 |