NPN 5 GHz wideband transistor

DESCRIPTION NPN silicon planar epitaxial transistor in a plastic SOT23 envelope. It is primarily intended for low noise, general RF applications.

文件：63.23 Kbytes 页数：8 Pages

PHI

PHI

丝印：R7s；Package：SOT-23；NPN Silicon RF Transistor

Low Noise Silicon Bipolar RF Transistor • High linearity low noise RF transistor • 22 dBm OP1dB and 31 dBm OIP3 @ 900 MHz, 8 V, 70 mA • For UHF / VHF applications • Driver for multistage amplifiers • For linear broadband and antenna amplifiers • Collector design supports 5 V supply voltage

文件：80.64 Kbytes 页数：7 Pages

INFINEON

英飞凌

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

Low Noise Figure

DESCRIPTION • Low Noise Figure NF = 2.5 dB TYP. @VCE = 8 V, IC = 20 mA, f = 900 MHz • High Gain ︱ S21e︱ 2 = 10.5 dB TYP. @VCE= 8 V,IC = 70 mA,f = 900 MHz APPLICATIONS • Designed for use in low noise ,high-gain amplifiers and linear broadband amplifiers.

文件：189.42 Kbytes 页数：5 Pages

ISC

无锡固电

Silicon NPN RF Transistor

DESCRIPTION • Low Noise Figure NF = 2.5 dB TYP. @VCE = 8 V, IC = 20 mA, f = 900 MHz • High Gain ︱ S21e︱ 2 = 10.5 dB TYP. @VCE= 8 V,IC = 70 mA,f = 900 MHz APPLICATIONS • Designed for use in low noise ,high-gain amplifiers and linear broadband amplifiers.

文件：73.76 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN Silicon RF Transistor (For low noise, high-gain amplifiers For linear broadband amplifiers)

NPN Silicon RF Transistor • For low noise, high-gain amplifiers • For linear broadband amplifiers • Special application: antenna amplifiers • Complementary type: BFR 194 (PNP)

文件：57.83 Kbytes 页数：7 Pages

SIEMENS

西门子

丝印：R7s；Package：SOT-23；NPN Silicon RF Transistor

文件：523.74 Kbytes 页数：9 Pages

INFINEON

英飞凌

丝印：R7s；Package：SOT-23；Low Noise Silicon Bipolar RF Transistor

文件：622.35 Kbytes 页数：8 Pages

INFINEON

英飞凌

NPN 5 GHz wideband transistor

文件：229.01 Kbytes 页数：10 Pages

PHI

PHI

高线性度RF 管基

NPN硅射频晶体管 • 高线性低噪声射频晶体管\n• 适用于 UHF / VHF 应用\n• 适用于线性宽带和天线放大器\n• 无铅（符合 RoHS 标准）封装;

Infineon

英飞凌