NPN 4 GHz wideband transistor

DESCRIPTION NPN transistor in a plastic SOT89 envelope intended for application in thick and thin-film circuits. It is primarily intended for MATV purposes.

文件：227.38 Kbytes 页数：7 Pages

恩XP

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

NPN 4 GHz wideband transistor

DESCRIPTION NPN transistor in a plastic SOT89 envelope intended for application in thick and thin-film circuits. It is primarily intended for MATV purposes.

文件：37.77 Kbytes 页数：6 Pages

PHI

PHI

NPN 4 GHz wideband transistor

文件：42.61 Kbytes 页数：6 Pages

JMNIC

锦美电子

NPN 4 GHz wideband transistor

文件：42.61 Kbytes 页数：6 Pages

JMNIC

锦美电子

NPN 4 GHz wideband transistor

文件：233.52 Kbytes 页数：7 Pages

PHI

PHI

NPN 4 GHz宽频带晶体管

NPN晶体管，采用SOT89塑料封装，设计用于厚膜和薄膜电路中的应用。该晶体管主要设计用于MATV。 小型封装;

恩XP

Trans RF BJT NPN 18V 0.15A 4-Pin(3+Tab) SOT-89

NJS