Package：TO-261-4，TO-261AA；包装：卷带（TR）剪切带（CT） 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS NPN 15V 6GHZ SOT223-4

INFINEON

英飞凌

NPN Silicon RF Transistor (For low-distortion broadband output amplifier stages in antenna and telecommunications)

NPN Silicon RF Transistor • For low-distortion broadband amplifier stages in antenna and telecommunication systems up to 2 GHz at collector currents from 70 mA to 130 mA • Power amplifiers for DECT and PCN systems • Integrated emitter ballast resistor • fT = 6 GHz

文件：49.64 Kbytes 页数：6 Pages

SIEMENS

西门子

NPN Silicon RF Transistor

NPN Silicon RF Transistor • For low-distortion broadband amplifier stages in antenna and telecommunication systems up to 2 GHz at collector currents from 70 mA to 130 mA • Power amplifiers for DECT and PCN systems • Integrated emitter ballast resistor • fT = 6 GHz

文件：100.64 Kbytes 页数：6 Pages

INFINEON

英飞凌

NPN 6.5 GHz wideband transistor

DESCRIPTION NPN wideband transistor in a 4-lead dual-emitter SOT172A2 package with a ceramic cap. All leads are isolated from the mounting base. FEATURES • Optimum temperature profile and excellent reliability properties ensured by emitter-ballasting resistors and application of gold sandwich m

文件：78.62 Kbytes 页数：12 Pages

PHI

PHI