Mounting flange

文件：510.73 Kbytes 页数：1 Pages

PF

倍加福

丝印：BF4；Package：SMA；400 W Transient Voltage Suppressor

1. General description 400 W uni- and bi-directional Transient Voltage Suppressor (TVS) in a SMA Surface-Mounted Device (SMD) plastic package, designed for transient voltage protection. 2. Features and benefits • Rated peak pulse power at 10/1000 μs waveform: PPPM = 400 W • Reverse standoff

文件：217.72 Kbytes 页数：12 Pages

NEXPERIA

安世

SINGLE PHASE MOULDED BRIDGES 0,8 AMP TO 1,5 AMP

[FACON] single phase moulded bridges 0,8 Amp to 1,5 Amp single phase moulded bridges 3 A to 6 A moulded single phase bridges 10 A to 35 A single phase moulded bridges 10 A to 50 A moulded single phase bridges 25 A to 50 A

文件：426.16 Kbytes 页数：5 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS

Low-Noise N-Channel Junction Field-Effect Transistor for RF Applications BF 410 A, B, C, and D are asymmetric epitaxial planar N-channel junction field-effect transistors in plastic package similar to TO92 (10 A 3 DIN 41888). They are designed for use up to the VHF range.

文件：54.98 Kbytes 页数：3 Pages

SIEMENS

西门子

LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS

Low-Noise N-Channel Junction Field-Effect Transistor for RF Applications BF 410 A, B, C, and D are asymmetric epitaxial planar N-channel junction field-effect transistors in plastic package similar to TO92 (10 A 3 DIN 41888). They are designed for use up to the VHF range.

文件：54.98 Kbytes 页数：3 Pages

SIEMENS

西门子

N-channel silicon field-effect transistors

DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended for applications up to the VHF range. These FETs can be supplied in four IDSS groups. Special features are the low feedback capacitance and the low noise figure. Thanks

文件：36.05 Kbytes 页数：6 Pages

PHI

PHI

N-channel silicon field-effect transistors

DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended for applications up to the VHF range. These FETs can be supplied in four IDSS groups. Special features are the low feedback capacitance and the low noise figure. Thanks

文件：36.05 Kbytes 页数：6 Pages

PHI

PHI

LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS

Low-Noise N-Channel Junction Field-Effect Transistor for RF Applications BF 410 A, B, C, and D are asymmetric epitaxial planar N-channel junction field-effect transistors in plastic package similar to TO92 (10 A 3 DIN 41888). They are designed for use up to the VHF range.

文件：54.98 Kbytes 页数：3 Pages

SIEMENS

西门子

LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS

Low-Noise N-Channel Junction Field-Effect Transistor for RF Applications BF 410 A, B, C, and D are asymmetric epitaxial planar N-channel junction field-effect transistors in plastic package similar to TO92 (10 A 3 DIN 41888). They are designed for use up to the VHF range.

文件：54.98 Kbytes 页数：3 Pages

SIEMENS

西门子

N-channel silicon field-effect transistors

DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended for applications up to the VHF range. These FETs can be supplied in four IDSS groups. Special features are the low feedback capacitance and the low noise figure. Thanks

文件：36.05 Kbytes 页数：6 Pages

PHI

PHI