RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

Dual N-channel dual-gate MOSFET

OverviewThe BF1216 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross modulation performance during AGC. Integrated diodes between the gates and sour \n\n•High forward transfer admittance\n\n•High forward transfer admittance to input capacitance ratio\n\n•Superior cross modulation performance during AGC\n\n•Two low noise gain controlled amplifiers in a single package;

恩XP

恩智浦

C/CT Series High Current AC, Snap-on Type

文件：297.43 Kbytes 页数：5 Pages

KEMETKEMET Corporation

基美

High Current AC, Snap-on Type

文件：297.44 Kbytes 页数：5 Pages

KEMETKEMET Corporation

基美

KEMET, C/CT-1216, Current, Round - Snap-on, AC, High Performance, Compact, Slim, Flame Retardant

文件：54.99 Kbytes 页数：1 Pages

KEMETKEMET Corporation

基美