RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

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恩XP

Dual N-channel dual-gate MOSFET

OverviewThe BF1215 is a combination of two dual gate MOSFET amplifiers with shared source lead, shared gate2 lead and an integrated switch. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross modulation performance during AGC. Integrated \n\n•High forward transfer admittance to input capacitance ratio\n\n•Internal switch reduces external components\n\n•Suitable for VHF and UHF applications\n\n•Superior cross modulation performance during AGC\n\n•Two low noise gain controlled amplifiers in a single package;

恩XP

恩智浦

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The BUH1015 and BUH1015HI are manufactured using Multiepitaxial Mesa technology for cost-effective high performance and use a Hollow Emitter structure to enhance switching speeds. The BUH series is designed for use in horizontal deflection circuits in televisions and monitors. ■ STM

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STMICROELECTRONICS

意法半导体

Cu Alloy Bare Ferrule, Smooth Funnel Entry, 12 AWG, 0.59 L, Seamless bbl, Tin Plated, For Use On Cu Cond.

文件：258.82 Kbytes 页数：2 Pages

HUBBELL

HUBBELL INCORPORATED

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The BUW1215 is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. ■ STMicroelectronics PREFERRED SALESTYPE ■ HIGH VOLTAGE CAPABILITY (> 1500 V) ■ VERY HIGH SWITCHING SPEED APPLICATI

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STMICROELECTRONICS

意法半导体