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BF12

Mounting flange

文件:253.32 Kbytes 页数:1 Pages

PF

倍加福

BF1201

N-channel dual-gate PoLo MOS-FETs

DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1201, BF1201R and BF1201WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package

文件:113.99 Kbytes 页数:16 Pages

PHI

飞利浦

PHI

BF1201

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件:9.37507 Mbytes 页数:130 Pages

恩XP

恩XP

BF1201R

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件:9.37507 Mbytes 页数:130 Pages

恩XP

恩XP

BF1201R

N-channel dual-gate PoLo MOS-FETs

DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1201, BF1201R and BF1201WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package

文件:113.99 Kbytes 页数:16 Pages

PHI

飞利浦

PHI

BF1201WR

N-channel dual-gate PoLo MOS-FETs

DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1201, BF1201R and BF1201WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package

文件:113.99 Kbytes 页数:16 Pages

PHI

飞利浦

PHI

BF1201WR

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件:9.37507 Mbytes 页数:130 Pages

恩XP

恩XP

BF1202

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件:9.37507 Mbytes 页数:130 Pages

恩XP

恩XP

BF1202

N-channel dual-gate PoLo MOS-FETs

DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1202, BF1202R and BF1202WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package

文件:116.05 Kbytes 页数:16 Pages

PHI

飞利浦

PHI

BF1202R

N-channel dual-gate PoLo MOS-FETs

DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1202, BF1202R and BF1202WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package

文件:116.05 Kbytes 页数:16 Pages

PHI

飞利浦

PHI

产品属性

  • 产品编号:

    BF12

  • 制造商:

    Pepperl+Fuchs, Inc.

  • 类别:

    传感器,变送器 > 配件

  • 包装:

  • 配件类型:

    安装法兰

  • 描述:

    M12 DIA MOUNTING FLANGE

供应商型号品牌批号封装库存备注价格
原厂
16+
原厂封装
10000
全新原装正品,代理优势渠道供应,欢迎来电咨询
询价
Pepperl + Fuchs
2022+
6
全新原装 货期两周
询价
115
9051
05+
1
原厂原装
询价
PHI
SOT23-4
2978
正品原装--自家现货-实单可谈
询价
PHI
24+/25+
2899
原装正品现货库存价优
询价
PHI
1215+
SOT-143
150000
全新原装,绝对正品,公司大量现货供应.
询价
恩XP
2016+
SOT-363
72000
只做原装,假一罚十,公司可开17%增值税发票!
询价
恩XP
24+
SOT343
5000
深圳现货价格优势
询价
恩XP
16+
NA
8800
诚信经营
询价
PHI
24+
SOT23-5
21322
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
更多BF12供应商 更新时间2025-10-8 10:05:00