IGBT驱动芯片

BYD

比亚迪半导体

20V一驱三驱动芯片 IGBT低压驱动IC解决方案

BYD

比亚迪半导体

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 14A@ TC=25℃ · Drain Source Voltage -VDSS= 50V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.1Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：306.28 Kbytes 页数：2 Pages

ISC

无锡固电

MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use

文件：218.43 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use

文件：218.43 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体