BF1109中文资料恩XP数据手册PDF规格书

FEATURES

 Short channel transistor with high

forward transfer admittance to input

capacitance ratio

 Low noise gain controlled amplifier

up to 1 GHz

 Internal self-biasing circuit to

ensure good cross-modulation

performance during AGC and good

DC stabilization.

APPLICATIONS

 VHF and UHF applications with 9 V

supply voltage, such as television

tuners and professional

communications equipment.

DESCRIPTION

Enhancement type N-channel

field-effect transistor with source and

substrate interconnected. Integrated

diodes between gates and source

protect against excessive input

voltage surges. The BF1109,

BF1109R and BF1109WR are

encapsulated in the SOT143B,

SOT143R and SOT343R plastic

packages respectively.