FEATURES

 Short channel transistor with high

forward transfer admittance to input

capacitance ratio

 Low noise gain controlled amplifier

up to 1 GHz

 Internal self-biasing circuit to

ensure good cross-modulation

performance during AGC and good

DC stabilization.

APPLICATIONS

 VHF and UHF applications with 9 V

supply voltage, such as television

tuners and professional

communications equipment.

DESCRIPTION

Enhancement type N-channel

field-effect transistor with source and

substrate interconnected. Integrated

diodes between gates and source

protect against excessive input

voltage surges. The BF1109,

BF1109R and BF1109WR are

encapsulated in the SOT143B,

SOT143R and SOT343R plastic

packages respectively.

BF1109属于分立半导体产品 > 晶体管 - FET，MOSFET - 射频。恩智浦半导体公司制造生产的BF1109晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。