2.0mm Pitch Pin Header Dual Row, Surface Mount

文件：116.1 Kbytes 页数：1 Pages

GCT

嵌入式保险座

材质：电木，铜\n\n最大电压：600V AC\n\n最大电流：30A\n\n适用于：10x38mm 保险丝;

Better

贝特股份

Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)

Silicon N-Channel MOSFET Tetrode •For low noise, high gain controlled input stages up to 1GHz •Operating voltage 5V •Integrated stabilized bias network

文件：51.96 Kbytes 页数：4 Pages

SIEMENS

西门子

丝印：MZs；Package：SOT-143；Silicon N-Channel MOSFET Tetrode

Silicon N-Channel MOSFET Tetrode •For low noise, high gain controlled input stages up to 1 GHz •Operating voltage 5V •Integrated biasing network •Pb-free (RoHS compliant) package1) •Qualified according AEC Q101

文件：252.08 Kbytes 页数：5 Pages

Infineon

英飞凌

Silicon N-Channel MOSFET Tetrode

Silicon N-Channel MOSFET Tetrode •For low noise, high gain controlled input stages up to 1 GHz •Operating voltage 5V •Integrated biasing network •Pb-free (RoHS compliant) package1) •Qualified according AEC Q101

文件：252.08 Kbytes 页数：5 Pages

Infineon

英飞凌

Silicon N-Channel MOSFET Tetrode

Silicon N-Channel MOSFET Tetrode •For low noise, high gain controlled input stages up to 1 GHz •Operating voltage 5 V •Integrated biasing network •Pb-free (RoHS compliant) package1) •Qualified according AEC Q101

文件：252.41 Kbytes 页数：5 Pages

Infineon

英飞凌

Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)

Silicon N-Channel MOSFET Tetrode •For low noise, high gain controlled input stages up to 1GHz •Operating voltage 5V •Integrated stabilized bias network

文件：52.96 Kbytes 页数：4 Pages

SIEMENS

西门子

Silicon N-Channel MOSFET Tetrode

Silicon N-Channel MOSFET Tetrode •For low noise, high gain controlled input stages up to 1 GHz •Operating voltage 5 V •Integrated biasing network •Pb-free (RoHS compliant) package1) •Qualified according AEC Q101

文件：252.41 Kbytes 页数：5 Pages

Infineon

英飞凌

Silicon N-Channel MOSFET Tetrode

Silicon N-Channel MOSFET Tetrode •For low noise, high gain controlled input stages up to 1 GHz •Operating voltage 5 V •Integrated biasing network •Pb-free (RoHS compliant) package1) •Qualified according AEC Q101

文件：252.41 Kbytes 页数：5 Pages

Infineon

英飞凌

Silicon N-Channel MOSFET Tetrode

Silicon N-Channel MOSFET Tetrode •For low noise, high gain controlled input stages up to 1 GHz •Operating voltage 5V •Integrated biasing network •Pb-free (RoHS compliant) package1) •Qualified according AEC Q101

文件：252.08 Kbytes 页数：5 Pages

Infineon

英飞凌