丝印：BE；Package：SOD-123；3.3 To 48V 400W Surface Mount Transient Voltage Suppressors (TVS)

Features Glass passivated chip 400W peak pulse power capability with a 10/1000us waveform Repetitive rate (duty cycle):0.01 Typical IR less than 1μA above 10V Excellent clamping capability Very fast response time High temperature soldering: 260℃/10s at terminals. Meet AEC-Q101 requirement

文件：3.27335 Mbytes 页数：6 Pages

UNSEMI

优恩半导体

丝印：BE；Package：DO-214AC；5.0 To 200V 600W Surface Mount Transient Voltage Suppressors (TVS)

Glass passivated chip 600W peak pulse power capability with a 10/1000us waveform Repetitive rate (duty cycle):0.01 Typical IR less than 1μA above 10V Excellent clamping capability Very fast response time High temperature soldering: 260°C/10s at terminals. RoHS compliant Features

文件：3.35089 Mbytes 页数：6 Pages

UNSEMI

优恩半导体

丝印：Be；Package：SOT1203；Single dual-supply translating 2-input NOR with enable

1. General description The 74AVC1T8128 is a single dual-supply translating 2-input NOR with enable input. It features two data input pins (A, B), one enable input pin (E), one data output pin (Y) and dual-supply pins (VCC(A) and VCC(B)). Both VCC(A) and VCC(B) can be supplied at any voltage bet

文件：205.8 Kbytes 页数：12 Pages

NEXPERIA

安世

丝印：BE；Package：SOD-923F；SMD Schottky Barrier Diode

Features - Low forward voltage. - Majority carrier conduction. - Extremely thin/leadless package. - Designed for mounting on small surface. - AEC-Q101 Qualified.

文件：476.17 Kbytes 页数：4 Pages

COMCHIP

典琦

丝印：BE；Package：SOD-523F；SMD Schottky Barrier Diode

Features - Low forward voltage. - Designed for mounting on small surface. - Extremely thin package. - Majority carrier conduction. - AEC-Q101 Qualified & PPAP.

文件：474.48 Kbytes 页数：4 Pages

COMCHIP

典琦

丝印：BE；Package：CSP-4；HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR

Features · Low Dropout Voltage at IOUT=100mA: 150mV Typical (Except 1.2V, 1.3V and 1.5V Versions) · Low Standby Current: 0.1μA Typical · Low Quiescent Current: 25μA Typical · High Ripple Rejection: 70dB Typical （f=1kHz） · Output Current: More Than 200mA (300mA Limit) · Extremely Low Noise:

文件：1.19367 Mbytes 页数：29 Pages

DIODES

美台半导体

丝印：BE；Package：SOT-89；NPN Silicon AF Transistors

FEATURES ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BCX51…BCX53(PNP)

文件：191.98 Kbytes 页数：5 Pages

BILIN

银河微电

丝印：BE；Package：SOT-89-3L；SOT-89-3L Plastic-Encapsulate Transistors

FEATURES ® PNP Complements to BCX51,BCX52,BCX53 ® Low Voltage ® High Current APPLICATIONS ® Driver Stages of Audio Amplifiers

文件：1.18577 Mbytes 页数：3 Pages

DGNJDZ

南晶电子

丝印：BE；Package：SOT-89；NPN Medium Power Transistors

Features ● High current (max. 1 A). ● Low voltage (max. 80 V).

文件：53.61 Kbytes 页数：2 Pages

KEXIN

科信电子

丝印：BE；Package：SOT-89；Plastic-Encapsulate Transistors

FEATURES PNP Complements to BCX51,BCX52,BCX53 Low Voltage High Current APPLICATIONS Driver Stages of Audio Amplifiers

文件：531.72 Kbytes 页数：4 Pages

GWSEMI

唯圣电子