NPN SILICON TRANSISTORS, DIFFUSED MESA

[COMSET] NPN SILICON TRANSISTORS, DIFFUSED MESA LF Large Signal Power Amplification High Current Fast Switching

文件：168.67 Kbytes 页数：4 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 90V(Min.) • Collector-Emitter Saturation Voltage- : VCE(sat)= 0.6V(Max)@ IC = 2A • High Switching Speed APPLICATIONS • Designed for LF signal powe amplifier applications.

文件：224.87 Kbytes 页数：2 Pages

ISC

无锡固电

LF large signal power amplification

• LF large signal power amplification Amplification BF grands siyniux de puissance • High current fatt switching Commutation rapide ton cotiim

文件：99.45 Kbytes 页数：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN SILICON TRANSISTORS, DIFFUSED MESA

NPN SILICON TRANSISTORS, DIFFUSED MESA LF Large Signal Power Amplification High Current Fast Switching

文件：250.38 Kbytes 页数：4 Pages

COMSET

NPN SILICON TRANSISTORS, DIFFUSED MESA

文件：79.05 Kbytes 页数：3 Pages

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Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.

文件：11.29 Kbytes 页数：1 Pages

SEME-LAB

Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

文件：11.29 Kbytes 页数：1 Pages

SEME-LAB

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NJS