BDX53B中文资料Medium Power NPN Darlington Bipolar Power Transistor数据手册ONSEMI规格书

描述 Description

The 8 A, 100 V, 65 W PNP Darlington Bipolar Power Transistor is designed for general purpose and low speed switching applications. The BDX53B, BDX53C, BDX54B and BDX54C are complementary devices.

特性 Features

• High DC Current GainhFE = 2500 (Typ) @ IC = 4.0 Adc
• Collector Emitter Sustaining Voltage@ 100 mAdcVCEO(sus) = 80 Vdc (Min)BDX53B, 54B VCEO(sus) = 100 Vdc (Min) - BDX53C, 54C
• Low Collector-Emitter Saturation VoltageVCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 AdcVCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc
• Monolithic Construction with Built-In Base-Emitter Shunt Resistors
• TO-220AB Compact Package
• Pb-Free Packages are Available

简介

BDX53B属于分立半导体产品的晶体管-双极性晶体管（BJT）-单个。由制造生产的BDX53B晶体管 - 双极性晶体管（BJT）- 单个分立式双极结型晶体管 (BJT) 通常在音频、无线电及其他应用中用于构建模拟信号放大功能。作为大批量生产的第一批半导体器件之一，对于涉及高频开关和在大电流或高电压下工作的应用而言，它们的特性相比某些器件类型不占优势，但对于需要以极小的噪声和失真构建模拟信号的应用而言，它们仍然是首选技术。