NPN/PNP PLASTIC POWER TRANSISTORS

NPN/PNP PLASTIC POWER TRANSISTORS Power Darlington for Linear Switchilng Application

文件：188.81 Kbytes 页数：4 Pages

CDIL

POWER TRANSISTORS(10A,70W)

10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 40-100 VOLTS 70 WATTS

文件：92.74 Kbytes 页数：2 Pages

MOSPEC

统懋

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS The BDX33B, BDX33B and BDX33C are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The com

文件：327.73 Kbytes 页数：6 Pages

COMSET

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

The BDX34B, BDX34B and BDX34C are silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary NPN types are the BDX33A, BDX33B and BDX33C

文件：106.82 Kbytes 页数：4 Pages

COMSET

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220C package ·High DC current gain ·DARLINGTON ·Complement to type BDX33/A/B/C APPLICATIONS ·For power linear and switching applications

文件：134.86 Kbytes 页数：3 Pages

ISC

无锡固电

Silicon PNP Darlington Power Transistor

DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS ..designed for general-purpose amplifier and low speed switching application* FEATURES: * Collector-Emitter Sustaining Voltage VCEO(sus) = 45 V (Min) - BDX33. BUX34 = 60 V(Min)- BDX33A. BDX34A

文件：121.81 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Transistor de puissance PNP darlington

• Designed for Complementary Use with BDX33, BDX33A, BDX33B, BDX33C and BDX33D • 70 W at 25°C Case Temperature • 10 A Continuous Collector Current • Minimum hFE of 750 at 3 V , 3 A

文件：91.9 Kbytes 页数：7 Pages

POINN

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

These devices are designed for general purpose and low speed switching applications. Features • High DC Current Gain − hFE = 2500 (typ.) at IC = 4.0 • Collector−Emitter Sustaining Voltage at 100 mAdc VCEO(sus) = 80 Vdc (min) − BDX33B, BDX334B = 100 Vdc (min) − BDX33C, BDX334C

文件：135.49 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Power Linear and Switching Applications

Power Linear and Switching Applications • High Gain General Purpose • Power Darlington TR • Complement to BDX33/33A/33B/33C respectively

文件：39.43 Kbytes 页数：5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220C package ·High DC current gain ·DARLINGTON ·Complement to type BDX33/A/B/C APPLICATIONS ·For power linear and switching applications

文件：93.89 Kbytes 页数：3 Pages

SAVANTIC