BDX33B中文资料10 A, 80 V NPN Darlington Bipolar Power Transistor数据手册ONSEMI规格书

描述 Description

The 10 A, 100 V PNP Darlington Bipolar Power Transistor is designed for general purpose and low speed switching applications. The BDX33B, BDX33C, BDX34B and BDX34C are complementary devices.

特性 Features

• High DC Current Gain -hFE = 2500 (typ.) at IC = 4.0
• Collector-Emitter Sustaining Voltage at 100 mAdc VCEO(sus) = 80 Vdc (min.)BDX33B, 34B VCEO(sus) = 100 Vdc (min.) - BDX33C, 34C
• Low Collector-Emitter Saturation Voltage CE(sat) = 2.5 Vdc (max.) at IC = 3.0 AdcBDX33B, 33C/34B, 34C
• Monolithic Construction with Build-In Base-Emitter Shunt resistors
• TO-220AB Compact Package
• Pb-Free Packages are Available

简介

BDX33B属于分立半导体产品的晶体管-双极性晶体管（BJT）-单个。由制造生产的BDX33B晶体管 - 双极性晶体管（BJT）- 单个分立式双极结型晶体管 (BJT) 通常在音频、无线电及其他应用中用于构建模拟信号放大功能。作为大批量生产的第一批半导体器件之一，对于涉及高频开关和在大电流或高电压下工作的应用而言，它们的特性相比某些器件类型不占优势，但对于需要以极小的噪声和失真构建模拟信号的应用而言，它们仍然是首选技术。