BDT63C

isc Silicon NPN Darlington Power Transistor

DESCRIPTION ·CollectorCurrent-IC=10A ·HighDCCurrentGain-hFE=1000(Min)@IC=3A ·ComplementtoTypeBDT62/A/B/C APPLICATIONS ·Designedforaudiooutputstagesandgeneralpurposeamplifierapplications

BDT63C

SILICON DARLINGTON POWER TRANSISTORS

NPNepitaxial-basetransistorsinamonolithicDalringtoncircuitandhousedinaTO-220envelope.Theyareintendedforoutputstagesinaudioequipment,generalamplifiers,andanalogueswitchingapplication. PNPcomplementsareBDT62-A-B-C CompliancetoRoHS.

BDT63C

Silicon NPN Darlington Power Transistor

BDT63C

isc Silicon NPN Darlington Power Transistor

BDT63C

Darlington BJT;

BDT63C

Transistor;

BDT63CX-MAG.R

BDT63CX-MAG.R - 单晶体管 双极, 达林顿, NPN, 115 V, 90 W, 10 A, 1000 hFE; ·Monolithic Darlington circuit\n;

The BDT63CX-MAG.R is a NPN silicon epitaxial power Darlington Transistor designed for audio output stages and general purpose applications.