SILICON DARLINGTON POWER TRANSISTORS

NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 envelope. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. PNP complements are BDT62-A-B-C Compliance to RoHS.

文件：111.05 Kbytes 页数：5 Pages

COMSET

isc Silicon NPN Darlington Power Transistor

DESCRIPTION ·Collector Current -IC= 10A ·High DC Current Gain-hFE= 1000(Min)@ IC= 3A ·Complement to Type BDT62/A/B/C APPLICATIONS ·Designed for audio output stages and general purpose amplifier applications

文件：120.22 Kbytes 页数：2 Pages

ISC

无锡固电

isc Silicon NPN Darlington Power Transistor

文件：268.59 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Darlington Power Transistor

文件：136.44 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Darlington BJT

NJS

Transistor

Comset

BDT63CX-MAG.R - 单晶体管 双极, 达林顿, NPN, 115 V, 90 W, 10 A, 1000 hFE

The BDT63CX-MAG.R is a NPN silicon epitaxial power Darlington Transistor designed for audio output stages and general purpose applications. ·Monolithic Darlington circuit;

TT Electronics