isc Silicon PNP Darlington Power Transistors

DESCRIPTION ·DC Current Gain -hFE = 1000(Min)@ IC= -3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT62; -80V(Min)- BDT62A; -100V(Min)- BDT62B; -120V(Min)- BDT62C ·Complement to Type BDT63/A/B/C APPLICATIONS ·Designed for use in

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ISC

无锡固电

Silicon PNP Darlington Power Transistors

文件：87.09 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Trans Darlington PNP 100V 10A

NJS

ON
TO-220

ON

上传：深圳市芯立阳电子技术有限公司

ST/意法
TO-220

ST/意法

上传：深圳庞田科技有限公司