45 AMP BLOCK DIODES

文件：232.33 Kbytes 页数：2 Pages

SHUNYE

顺烨电子

RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 80 Watts Minimum Gain = 12 dB Efficiency = 50

文件：57.29 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

P-Channel Enhancement Mode Field Effect Transistor

General Description Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

文件：92.24 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

FEATURES * 140 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt

文件：50.48 Kbytes 页数：2 Pages

ZETEX