丝印：BD238；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES Complement to BD233/BD235/BD237 respectively

文件：1.30158 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

Silicon PNP transistor in a TO-126F Plastic Package.

Descriptions Silicon PNP transistor in a TO-126F Plastic Package. Features Complementary pair with BD237. Applications Medium power linear and switching applications.

文件：908.67 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION The BD235 and BD237 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package inteded for use in medium power linear and switching applications. The complementary PNP types are BD236 and BD238 respectively. ■ SGS-THOMSON PREFERRED SALESTYPES

文件：75.78 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体

Medium Power Linear and Switching

Medium Power Linear and Switching Applications • Complement to BD 233/235/237 respectively

文件：37.69 Kbytes 页数：4 Pages

Fairchild

仙童半导体

Plastic Medium Power Bipolar Transistors

Plastic Medium Power Bipolar Transistors Designed for use in 5.0 to 10 W audio amplifiers and drivers utilizing complementary or quasi complementary circuits. Features • DC Current Gain − hFE = 40 (Min) @ IC = 0.15 Adc • Epoxy Meets UL 94 V0 @ 0.125 in • ESD Ratings: Human Body Model, 3B; >

文件：68.89 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

-80V, PNP TRANSISTOR

DESCRIPTION The UTC BD238 is a PNP epitaxial planar transistor, it uses UTC’s advanced technology to provide the customers with high DC current gain and high collector-emitter breakdown voltage, etc. FEATURES * High DC current gain * High collector-emitter breakdown voltage

文件：109.04 Kbytes 页数：3 Pages

UTC

友顺

EPITAXIAL SILICON POWER TRANSISTORS

EPITAXIAL SILICON POWER TRANSISTORS Intended for use in Medium Power Linear Switching Applications

文件：492.4 Kbytes 页数：4 Pages

CDIL

Silicon PNP Power Transistors

DESCRIPTION • With TO-126 package • Complement to type BD233/235 /237 APPLICATIONS • For medium power linear and switching applications

文件：130.68 Kbytes 页数：3 Pages

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION • DC Current Gain- : hFE=40(Min)@lc=-0.15A • Complement to Type BD233/235/237 APPLICATIONS • Designed for use in 5-10 watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.

文件：191.85 Kbytes 页数：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION • DC Current Gain- : hFE=40(Min)@lc=0.15A • Complement to Type BD234/236/238 APPLICATIONS • Designedfor use in 5-10 watt audio amplifiers and drivers utilizing complementaryor quasi complementarycircuits.

文件：138.24 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司