丝印：BD238；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES Complement to BD233/BD235/BD237 respectively

文件：1.30158 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：BD238；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES Complement to BD233/BD235/BD237 respectively

文件：1.30158 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：BD238；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES Complement to BD233/BD235/BD237 respectively

文件：1.30158 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：BD238；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES Complement to BD233/BD235/BD237 respectively

文件：1.30158 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION The BD235 and BD237 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package inteded for use in medium power linear and switching applications. The complementary PNP types are BD236 and BD238 respectively. ■ SGS-THOMSON PREFERRED SALESTYPES

文件：75.78 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体

Medium Power Linear and Switching

Medium Power Linear and Switching Applications • Complement to BD 233/235/237 respectively

文件：37.69 Kbytes 页数：4 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Plastic Medium Power Bipolar Transistors

Plastic Medium Power Bipolar Transistors Designed for use in 5.0 to 10 W audio amplifiers and drivers utilizing complementary or quasi complementary circuits. Features • DC Current Gain − hFE = 40 (Min) @ IC = 0.15 Adc • Epoxy Meets UL 94 V0 @ 0.125 in • ESD Ratings: Human Body Model, 3B; >

文件：68.89 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Silicon PNP Power Transistors

DESCRIPTION • With TO-126 package • Complement to type BD233/235 /237 APPLICATIONS • For medium power linear and switching applications

文件：130.68 Kbytes 页数：3 Pages

ISC

无锡固电

Silicon PNP transistor in a TO-126F Plastic Package.

Descriptions Silicon PNP transistor in a TO-126F Plastic Package. Features Complementary pair with BD237. Applications Medium power linear and switching applications.

文件：908.67 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

Silicon PNP Power Transistor

DESCRIPTION • DC Current Gain- : hFE=40(Min)@lc=-0.15A • Complement to Type BD233/235/237 APPLICATIONS • Designed for use in 5-10 watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.

文件：191.85 Kbytes 页数：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司