| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
BD136 | PNP SILICON TRANSISTOR DESCRIPTION TheUTCBD136/BD138/BD140aresiliconepitaxialplanerPNPtransistor,designedforuseasaudioamplifiersanddriversutilizingcomplementaryorquasicomplementarycircuits. ThecomplementaryNPNtypesaretheBD135/BD137/BD139. | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | |
BD136 | Plastic-Encapsulated Transistors TRANSISTOR(PNP) FEATURES PowerdissipationPCM:1.25W(Tamb=25℃) CollectorcurrentICM:-1.5A OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃ | TEL TRANSYS Electronics Limited | TEL | |
BD136 | PNP PLASTIC POWER TRANSISTORS TRANSISTOR(PNP) FEATURES PowerdissipationPCM:1.25W(Tamb=25℃) CollectorcurrentICM:-1.5A OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃ | TEL TRANSYS Electronics Limited | TEL | |
BD136 | Silicon PNP Power Transistors DESCRIPTION ·WithTO-126package ·Highcurrent ·ComplementtotypeBD135/137/139 APPLICATIONS ·Driverstagesinhigh-fidelityamplifiersandtelevisioncircuits | SAVANTIC Savantic, Inc. | SAVANTIC | |
BD136 | Plastic Medium Power Silicon PNP Transistor PlasticMediumPowerSiliconPNPTransistor Thisseriesofplastic,medium−powersiliconPNPtransistorsaredesignedforuseasaudioamplifiersanddriversutilizingcomplementaryorquasicomplementarycircuits. Features •Pb−FreePackagesareAvailable* •DCCurrentGain−hFE=40(Min)@ | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | |
BD136 | EPITAXIAL PLANAR PNP TRANSISTOR GENERALPURPOSEAPPLICATION. FEATURES •HighCurrent.(Max.:-1.5A) •LowVoltage(Max.:-45V) •DCCurrentGain:hFE=40Min.@IC=-0.15A •ComplementarytoBD135. | KECKEC CORPORATION KEC株式会社 | KEC | |
BD136 | Silicon PNP Power Transistors DESCRIPTION •WithTO-126package •Highcurrent •ComplementtotypeBD135/137/139 APPLICATIONS •Driverstagesinhigh-fidelityamplifiersandtelevisioncircuits | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | |
BD136 | PNP power transistors DESCRIPTION PNPpowertransistorinaTO-126;SOT32plasticpackage.NPNcomplements:BD135,BD137andBD139. FEATURES •Highcurrent(max.1.5A) •Lowvoltage(max.80V). APPLICATIONS •Generalpurposepowerapplications,e.g.driverstagesinhi-fiamplifiersandtelevisi | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | |
BD136 | PNP SILICON TRANSISTORS Description TheseepitaxialplanartransistorsaremountedintheSOT-32plasticpackage.Theyaredesignedforaudioamplifiersanddriversutilizingcomplementaryorquasi-complementarycircuits.TheNPNtypesaretheBD135andBD139,andthecomplementaryPNPtypesaretheBD136andBD140. Fe | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | |
BD136 | Plastic Medium Power Silicon PNP Transistor 1.5AMPEREPOWERTRANSISTORSPNPSILICON45,60,80VOLTS10WATTS ...designedforuseasaudioamplifiersanddriversutilizingcomplementaryorquasicomplementarycircuits. •DCCurrentGain—hFE=40(Min)@IC=0.15Adc •BD136,138,140arecomplementarywithBD135,137,139 | MotorolaMotorola, Inc 摩托罗拉 | Motorola | |
BD136 | PNP SILICON TRANSISTORS POWERTRANSISTORSPNPSILICON | SIEMENS Siemens Ltd | SIEMENS | |
BD136 | Medium Power Linear and Switching Applications Features •ComplementtoBD135,BD137andBD139respectively Applications •MediumPowerLinearandSwitching | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | |
BD136 | Medium Power Linear and Switching Applications Features •ComplementtoBD135,BD137andBD139respectively Applications MediumPowerLinearandSwitchingApplications | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | |
BD136 | Silicon PNP transistor in a TO-126F Plastic Package. Descriptions SiliconPNPtransistorinaTO-126FPlasticPackage. Features ComplementtoBD135. Applications Mediumpowerlinearandswitchingapplications. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | FOSHAN | |
BD136 | PNP General Purpose Transistor FEATURES •HighCurrent | SECOS SeCoS Halbleitertechnologie GmbH | SECOS | |
BD136 | TO-126 Plastic-Encapsulate Transistors TRANSISTOR(PNP) FEATURES ●HighCurrent ●ComplementToBD135,BD137AndBD139 | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | JIANGSU | |
BD136 | EPITAXIAL SILICON POWER TRANSISTORS PNPEPITAXIALSILICONPOWERTRANSISTORS DesignedforuseasAudioAmplifierandDriversUtilizing ComplementaryBD135,BD137,BD139 | CDIL CDIL | CDIL | |
BD136 | TRANSISTOR (PNP) FEATURES PowerdissipationPCM:1.25W(Tamb=25℃) CollectorcurrentICM:-1.5A OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃ | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳实业深圳市永而佳实业有限公司 | WINNERJOIN | |
BD136 | PNP Epitaxial Silicon Transistor Features •ComplementtoBD135,BD137andBD139respectively Applications •MediumPowerLinearandSwitching | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | |
BD136 | Medium Power Linear and Switching Applications Features •ComplementtoBD135,BD137andBD139respectively Applications •MediumPowerLinearandSwitching | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild |
晶体管资料
- 型号：
- 别名：
三极管、晶体管、晶体三极管
- 生产厂家：
- 制作材料：
Si-PNP
- 性质：
低频或音频放大 （LF）_功率放大 （L）
- 封装形式：
直插封装
- 极限工作电压：
45V
- 最大电流允许值：
1.5A
- 最大工作频率：
<1MHZ或未知
- 引脚数：
3
- 可代换的型号：
BD166,BC176,BD227,BD234,BD438,3CA4C,
- 最大耗散功率：
12.5W
- 放大倍数：
- 图片代号：
B-21
- vtest：
45
- htest：
999900
- atest：
1.5
- wtest：
12.5
产品属性
- 产品编号：
BD136
- 制造商：
onsemi
- 类别：
分立半导体产品 > 晶体管 - 双极性晶体管（BJT）- 单个
- 包装：
散装
- 晶体管类型：
PNP
- 不同 Ib、Ic 时 Vce 饱和压降（最大值）：
500mV @ 50mA，500mA
- 电流 - 集电极截止（最大值）：
100nA（ICBO）
- 不同 Ic、Vce 时 DC 电流增益 (hFE)（最小值）：
40 @ 150mA，2V
- 工作温度：
-55°C ~ 150°C（TJ）
- 安装类型：
通孔
- 封装/外壳：
TO-225AA，TO-126-3
- 供应商器件封装：
TO-126
- 描述：
TRANS PNP 45V 1.5A TO126
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
STM |
15+ |
原厂原装 |
29450 |
进口原装现货假一赔十 |
询价 | ||
ST |
15+ |
TO126 |
35250 |
原装进口现货,假一罚十 |
询价 | ||
STM |
21+ |
SOT-32-3 (TO-126-3) |
2000 |
原装正品 有挂有货 |
询价 | ||
STM |
21+ |
2000 |
SOT-32-3 (TO-126-3) |
询价 | |||
ST(意法半导体) |
22+ |
SOT-32 |
320 |
QQ询价 绝对原装正品 |
询价 | ||
STM |
23+ |
SOT-32-3 (TO-126-3) |
3000 |
原装现货支持送检 |
询价 | ||
11+ |
8621 |
询价 | |||||
DISCRETE |
50 |
STM |
29450 |
询价 | |||
ST |
05+ |
原厂原装 |
28051 |
只做全新原装真实现货供应 |
询价 | ||
ST专家 |
2022 |
TO-126 |
5880 |
原厂原装正品,价格超越代理 |
询价 |
