BD13510中文资料1.5 A, 45V NPN Power Bipolar Junction Transistor数据手册ONSEMI规格书

描述 Description

This series of plastic, NPN Power Bipolar Junction Transistor transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.

特性 Features

• Minimum Gain - hFE = 63 @ IC = 150 mA
• Low base drive
• BD135, BD137, BD139 are complementary with BD136, BD138, BD140
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

应用 Application

• Power supplies
• Power supplies

简介

BD13510属于分立半导体产品的晶体管-双极性晶体管（BJT）-单个。由ONSEMI制造生产的BD13510晶体管 - 双极性晶体管（BJT）- 单个分立式双极结型晶体管 (BJT) 通常在音频、无线电及其他应用中用于构建模拟信号放大功能。作为大批量生产的第一批半导体器件之一，对于涉及高频开关和在大电流或高电压下工作的应用而言，它们的特性相比某些器件类型不占优势，但对于需要以极小的噪声和失真构建模拟信号的应用而言，它们仍然是首选技术。