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BCX56-16-Q

80V,1ANPNmediumpowertransistors

1.Generaldescription NPNmediumpowertransistorsinaSOT89(SC-62)flatleadSurface-MountedDevice(SMD) plasticpackage 2.Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •Qualifiedaccordingt

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BCX56-16T

80V,1ANPNpowerbipolartransistors

Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BCX56-16T

80V,1APNPpowerbipolartransistors

Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BCX56-16TA

NPNSILICONPLANARMEDIUMPOWERTRANSISTORSINSOT89

Features •Ic=1AContinuousCollectorCurrent •LowSaturationVoltageVCE(sat)

DIODESDiodes Incorporated

美台半导体

BCX56-16-TP

NPNPlastic-EncapsulateTransistors

Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •PowerDissipation:PCM=0.5W(Tamb=25°C) •CollectorCurrent:ICM=1.0A •Collector-BaseVoltage:V(BR)CBO=100V •Marking:BCX56=BH,BCX56-10=BK,BCX56-16=BL •EpoxymeetsU

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

DCX56-16

NPNSURFACEMOUNTTRANSISTOR

Features •EpitaxialPlanarDieConstruction •ComplementaryPNPTypeAvailable(DCX53) •IdeallySuitedforAutomatedAssemblyProcesses •IdealforMediumPowerSwitchingorAmplificationApplications •LeadFreeByDesign/RoHSCompliant(Note1) •GreenDevice(Note2)

DIODESDiodes Incorporated

美台半导体

IRK56-16

PowerModule60Amp

TELTokyo Electron Ltd.

东电电子东京电子有限公司

KCP56-16

NPNMediumPowerTransistor

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

PDT-56-16

TheCompactPowerTransformer

WABASH

Wabash Transformer Inc.

PST-56-16

TheCompactPowerTransformer

WABASH

Wabash Transformer Inc.

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